Bipolar junction Transistors

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The invention of the junction transistor has change great revolution in the electronics world. Bipolar transistor was invented by Shockley in the year of 1950. Transistor and all semiconductor devices have many advantages, so electronics world grow with the semiconductors. Transistors are very small, less weight, not affected by shock and vibration.


Transistor has three terminals which is collector, base and emitter. The structure of transistor is P-N-P, consists of N- region and sandwiched between P regions. The terminals are used as three different functions. The emitter is used to emit holes or electrons, the collector is used to collect the holes or electrons, and base is used to support the emitter and collector.

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The input characteristics of transistor are about 0.4 V to 0.5 V it’s also depending upon their construction. The saturation voltage is about 0.7V to 0.8V. When above 0.8V may be rise to high values so that the transistors may get destroyed. The output characteristics of transistors are holes arriving at the collector is pulled out of the collector by the positive of the battery to produce the collector current. We can find the both characteristics of transistor from the plotted.

The whole electronics devices must have transistors because of transistor is a vital role in electronic devices. After the invention of transistors, the integrated circuit developed.

Bipolar junction Transistors Bipolar junction Transistors Reviewed by knowledge people creators on May 08, 2019 Rating: 5
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